<?xml version='1.0' encoding='UTF-8'?>
<doi_batch version="5.4.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.crossref.org/schema/5.4.0" xsi:schemaLocation="http://www.crossref.org/schema/5.4.0 https://www.crossref.org/schemas/crossref5.4.0.xsd" xmlns:jats="http://www.ncbi.nlm.nih.gov/JATS1" xmlns:fr="http://www.crossref.org/fundref.xsd" xmlns:ai="http://www.crossref.org/AccessIndicators.xsd" xmlns:rel="http://www.crossref.org/relations.xsd" xmlns:mml="http://www.w3.org/1998/Math/MathML">
  <head>
    <doi_batch_id>NONE</doi_batch_id>
    <timestamp>20260424082646217</timestamp>
    <depositor>
      <depositor_name>wseas/wseas</depositor_name>
      <email_address>content-registration-form+ja@crossref.org</email_address>
    </depositor>
    <registrant>content-registration-form</registrant>
  </head>
  <body>
    <journal>
      <journal_metadata>
        <full_title>International Journal of Applied Sciences &amp; Development</full_title>
        <issn media_type="electronic">2945-0454</issn>
      </journal_metadata>
      <journal_article>
        <titles>
          <title>Detailed AFM Study of the Effect of Variation in Deposition Rate and with Progressive Annealing on Silicon Nanostructures Deposited using HWCVD</title>
        </titles>
        <contributors>
          <person_name sequence="first" contributor_role="author">
            <given_name>Dr. Tarkeshwar</given_name>
            <surname>Patil</surname>
            <affiliations>
              <institution>
                <institution_name>Independent Scientist A-1/101, Jagruti Society, Bhatwadi, Ghatkopar (West), Mumbai – 400084. INDIA</institution_name>
              </institution>
            </affiliations>
          </person_name>
        </contributors>
        <jats:abstract xml:lang="en">
          <jats:p>As there is hardly any work carried out on effect of growth variations on Silicon Nanocrystals / nanostructures, we experimented and found that as the deposition rate is increased the structures the height of the nanostructures also increased. Further the appearance of the nanostructures and their evolution with annealing is being reported for the first time.</jats:p>
        </jats:abstract>
        <publication_date media_type="print">
          <month>04</month>
          <day>24</day>
          <year>2026</year>
        </publication_date>
        <publication_date media_type="online">
          <month>04</month>
          <day>24</day>
          <year>2026</year>
        </publication_date>
        <pages>
          <first_page>48</first_page>
        </pages>
        <publisher_item>
          <item_number item_number_type="article_number">6</item_number>
        </publisher_item>
        <ai:program name="AccessIndicators">
          <ai:license_ref>https://creativecommons.org/licenses/by/4.0/deed.en_US</ai:license_ref>
        </ai:program>
        <doi_data>
          <doi>10.37394/232029.2026.5.6</doi>
          <resource>https://wseas.com/journals/asd/2026/a12asd-006(2026).pdf</resource>
        </doi_data>
        <citation_list>
          <citation key="ref0">
            <unstructured_citation>V. Švrček, A. Slaoui, J.-C. Muller, Silicon nanocrystals as light converter for solar cells, Thin Solid Films, Volumes 451–452, 2004, Pages 384-388, ISSN 0040-6090, https://doi.org/10.1016/j.tsf.2003.10.133.</unstructured_citation>
          </citation>
          <citation key="ref1">
            <unstructured_citation>Elliman R.G., Wilkinson A.R., Smith N., Spooner M.G., Weijers T.D.M., Light Emission from Silicon Nanocrystals - Size Does Matter!, Journal of the Korean Physical Society, 45, (2004).</unstructured_citation>
          </citation>
          <citation key="ref2">
            <unstructured_citation>Basa P., Petrik P., Fried M., Dobos L., Pe'cz B., To'th L., Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models, Physica E, 38, pp. 76-79, (2007)</unstructured_citation>
          </citation>
          <citation key="ref3">
            <unstructured_citation>H. J. Cheong, J. H. Kang, J. K. Kim, and K. Yong, “Growth of Highly Luminescent Silicon Nanocrystals by Rapid Thermal Chemical Vapor Deposition,” KEM, vol. 277–279, pp. 977–982, Jan. 2005, doi: 10.4028/www.scientific.net/kem.277-279.977.</unstructured_citation>
          </citation>
          <citation key="ref4">
            <unstructured_citation>Chen R., Hu Y., Li X., He J., Zhang S. Silicon quantum dots prepared by electrochemical etching and their application in solar cells (2023) Journal of Materials Science: Materials in Electronics, 34 (13), art. no. 1105 DOI: 10.1007/s10854-023-10513-8</unstructured_citation>
          </citation>
          <citation key="ref5">
            <unstructured_citation>P. Mahajan, T. C. Patil, and S. Chakrabarti, “HWCVD-grown Silicon Nanocrystals : A study of the effect of annealing on structures evolved with varying growth rates,” MRS Proceedings, vol. 1178, pp. 1178-AA06-13, 2009. doi:10.1557/PROC-1178-AA06-13</unstructured_citation>
          </citation>
          <citation key="ref6">
            <unstructured_citation>T. C. Patil and S. Chakrabarti, "Growth mechanism for vertical growth of nanopillars in progressive annealed HWCVD grown silicon nanostructures," 2009 4th International Conference on Computers and Devices for Communication (CODEC), Kolkata, India, 2009, pp. 1-4.</unstructured_citation>
          </citation>
          <citation key="ref7">
            <unstructured_citation>Tarkeshwar C. Patil, Prantik Mahajan, S. Chakrabarti, Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition, Superlattices and Microstructures, Volume 48, Issue 2, 2010, Pages 190-197, ISSN 0749-6036, https://doi.org/10.1016/j.spmi.2010.05.008.</unstructured_citation>
          </citation>
          <citation key="ref8">
            <unstructured_citation>Vanzetti, L., Barozzi, M., Iacob, E., Bersani, M., Pucker, G. and Bellutti, P. (2008), Combined XPS, SIMS, and AFM analyses of silicon nanocrystals embedded in silicon oxide layers. Surf. Interface Anal., 40: 543-546. https://doi.org/10.1002/sia.2674</unstructured_citation>
          </citation>
        </citation_list>
      </journal_article>
    </journal>
  </body>
</doi_batch>
