International Journal of Electrical Engineering and Computer Science
E-ISSN: 2769-2507
Volume 3, 2021
Characterization Of N-Type AlxGa1-xAs/GaAs Heterostructures Grown ByElemental-Arsenic-Based- MOCVD
Authors: , , , , , ,
Abstract: In this work we present the results of the growth and characterization of AlxGa1-xAs/GaAs multilayer structures obtained in anelemental-arsenic-based-MOCVD system. The main goal is to explore the ability of the system for growing high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH3), which is manifested in the electrical and optical characteristics of both GaAs and AlxGa1-xAs layers. The characterization of these epilayers was performed using low temperature photoluminescence, Hall Effect measurements, XRay diffraction, Raman spectroscopy, secondary ion mass spectroscopy and Atomic Force Microscopy.
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Keywords: Elemental arsenic, MOCVD AlGaAs/GaAs epilayers, Hall effect, photoluminescence (PL), Atomic Force microscopy (AF), surface morphology, secondary ion mass spectroscopy (SIMS)
Pages: 38-43
International Journal of Electrical Engineering and Computer Science, E-ISSN: 2769-2507, Volume 3, 2021, Art. #7