International Journal of Electrical Engineering and Computer Science
E-ISSN: 2769-2507
Volume 3, 2021
Characterization Of ZnS/GaAs Nanostructures Grown By RF Magnetron Sputtering
Authors: , , , , , ,
Abstract: Zinc sulfide (ZnS) is one of the most important IIVI group semiconductors, with a wide direct band gap of 3.8 eV has been extensively investigated and used in electroluminescent devices, flat panel displays, infrared windows, sensors, and lasers. To explore the possibility of using it in electroluminescent devices, a study of the structural and optical properties of the host material is an important step. Based on the above criterion, the structural and optical properties of ZnS films have been studied in the present work. ZnS thin films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The stoichiometry chemical was determined by Energy-dispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveals that deposited films showed wurzite crystalline phase. The average crystallite size range of the film was from 11.15 to 34.95 nm, which was determined using the Scherrer formula. Besides it made an experimental study on first- and second-order Raman scattering of wurtzite. The 300 K photoluminescence presents a visible radiative band associates to vacancies of zinc and sulphur.
Search Articles
Pages: 44-50
International Journal of Electrical Engineering and Computer Science, E-ISSN: 2769-2507, Volume 3, 2021, Art. #8