Alexander Zemliak, Fernando Reyes, Jaime Cid, Sergio Vergara, Evgeniy Machusskiy, "Analysis of DAR IMPATT Diode for Some Frequency Bands," WSEAS Transactions on Circuits and Systems, vol. 14, pp. 127-132, 2015, DOI:
Alexander Zemliak, Fernando Reyes, Jaime Cid, Sergio Vergara, Evgeniy Machusskiy. Analysis of DAR IMPATT Diode for Some Frequency Bands.
WSEAS Transactions on Circuits and Systems. 2015;14:127-132.
WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 14, 2015
Analysis of DAR IMPATT Diode for Some Frequency Bands
Authors: , , , ,
Abstract: The analysis of DAR IMPATT diodes has been realized on basis of the precise drift-diffusion nonlinear model. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. The energy characteristics have been optimized for the second high frequency band near the 220 GHz.
Keywords:
Active layer structure analysis, DAR IMPATT diode, high frequency band, implicit numerical scheme
Pages: 127-132 WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 14, 2015, Art. #14 DOI: *As the DOI is a unique identifier, it is already available in the pdf version.
**The DOI link will be activated in the first midst of January 2026.
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