Alexander Zemliak, Fernando Reyes, Jaime Cid, Sergio Vergara, Evgeny Machusskiy, "Comparative Analysis of DDR and DAR IMPATT Diodes for Wide Frequency Band," WSEAS Transactions on Communications, vol. 12, pp. -, 2013, DOI:
Alexander Zemliak, Fernando Reyes, Jaime Cid, Sergio Vergara, Evgeny Machusskiy. Comparative Analysis of DDR and DAR IMPATT Diodes for Wide Frequency Band.
WSEAS Transactions on Communications. 2013;12:-.
WSEAS Transactions on Communications
Print ISSN: 1109-2742, E-ISSN: 2224-2864
Volume 12, 2013
Comparative Analysis of DDR and DAR IMPATT Diodes for Wide Frequency Band
Authors: , , , ,
Abstract: The analysis of Double Drift Region (DDR) and Double Avalanche Region (DAR) IMPATT diodes has been realized on basis of the precise drift-diffusion nonlinear model and special optimization procedure. DDR IMPATT diode includes one avalanche region and two drift regions and DAR IMPATT diode includes two avalanche regions inside the diode and one drift regions both for electrons and holes. The phase delay which was produced by means of the two avalanche regions and the drift region v is sufficient to obtain the negative resistance for the wide frequency band. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second and third frequency bands near the 220 and 330 GHz.
Pages: - WSEAS Transactions on Communications, ISSN / E-ISSN: 1109-2742 / 2224-2864, Volume 12, 2013DOI: *As the DOI is a unique identifier, it is already available in the pdf version.
**The DOI link will be activated in the first midst of January 2026.
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