Farshad Eshghabadi, Fatemeh Banitorfian, Massoud Dousti, Norlaili Mohd Noh, "A 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process," International Journal of Applied Mathematics, Computational Science and Systems Engineering, vol. 3, pp. 85-88, 2021, DOI:
Farshad Eshghabadi, Fatemeh Banitorfian, Massoud Dousti, Norlaili Mohd Noh. A 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process.
International Journal of Applied Mathematics, Computational Science and Systems Engineering. 2021;3:85-88.
International Journal of Applied Mathematics, Computational Science and Systems Engineering
E-ISSN: 2766-9823
Volume 3, 2021
A 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process
Authors: , , ,
Abstract: An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter describes the differences of the achieved specifications such as gain, noise figure, impedance matching, third-order intercept point, linearity, and power consumption using these processes.
Pages: 85-88 DOI: *As the DOI is a unique identifier, it is already available in the pdf version.
**The DOI link will be activated in the first midst of January 2026.
WSEAS Transactions on International Journal of Applied Mathematics, Computational Science and Systems Engineering, E-ISSN: 2766-9823, Volume 3, 2021, Art. #15
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