M.A. Mehrabova, H.R. Nuriyev, T.I. Kerimova, N.H. Hasanov, A.A. Abdullayeva, R.M. Sadigov, "Dielectric Permittivity and Conductivity in Cd1−xFexTe Semimagnetic Semiconductors," Engineering World, vol. 2, pp. 246-248, 2020, DOI:
M.A. Mehrabova, H.R. Nuriyev, T.I. Kerimova, N.H. Hasanov, A.A. Abdullayeva, R.M. Sadigov. Dielectric Permittivity and Conductivity in Cd1−xFexTe Semimagnetic Semiconductors.
Engineering World. 2020;2:246-248.
Engineering World
E-ISSN: 2692-5079 An Open Access, Peer Reviewed Journal of Selected Publications in Engineering and Applied Sciences
Volume 2, 2020
Dielectric Permittivity and Conductivity in Cd1−xFexTe Semimagnetic Semiconductors
Authors: , , , , ,
Abstract: This paper presents results of dielectric permittivity and conductivity measurements performed at alternating current for semimagnetic semiconductors $$Cd_{1-x}Fe_{x}Te (x = 0.08)$$ within the frequency range of 1kHz ≤f ≤1 MHz and in the temperature area T = 110÷465 K. It was defined that conductivity and dielectric permittivity increase with an increase in the Fe concentration. An anomaly is observed in the temperature dependence of the dielectric permittivity and relaxation in the frequency dependence. Taking into account the nature of the dependences, the possibility of ionic conductivity in the crystal is assumed.
Pages: 246-248 DOI: *As the DOI is a unique identifier, it is already available in the pdf version.
**The DOI link will be activated in the first midst of January 2026.
WSEAS Transactions on Engineering World, E-ISSN: 2692-5079, Volume 2, 2020, Art. #37
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