Abstract: The development of reliable simulation tools provides a valuable help in the design of modern
MRAMdevices. Thanks to its versatility in the choice of meshes and discretization, the finite element method
is a useful framework for the numerical solution of the magnetization dynamics. We review a finite element
implementation of both the Landau-Lifshitz-Gilbert equation and the spin and charge drift-diffusion formalism
in a solver employing open source software. The presented approach is successfully applied to emerging multilayered
MRAM cells.
S. Fiorentini, R. L. De Orio, J. Ender, S. Selberherr, M. Bendra, N. Jørstad, Wolfgang Goes, V. Sverdlov, "Finite Element Method for MRAM Switching Simulations," WSEAS Transactions on Systems and Control, vol. 17, pp. 585-588, 2022, DOI:10.37394/23203.2022.17.64
S. Fiorentini, R. L. De Orio, J. Ender, S. Selberherr, M. Bendra, N. Jørstad, Wolfgang Goes, V. Sverdlov. Finite Element Method for MRAM Switching Simulations.
WSEAS Transactions on Systems and Control. 2022;17:585-588. 10.37394/23203.2022.17.64